THE STUDY OF OXIDATION LEVEL OF POROUS SILICON USING AUGER'S SPECTROSCOPY

Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties.

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Bibliographic Details
Main Author: ANUAR BIN HAMZAH (Author)
Format: Thesis Book
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504 # # |a Includes bibliographical references (page 41-42) 
520 # # |a Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. 
650 # 0 |a Oxidation 
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