THE STUDY OF OXIDATION LEVEL OF POROUS SILICON USING AUGER'S SPECTROSCOPY
Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties.
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040 | # | # | |a UiTM |b eng |c UiTM |e rda |
090 | 0 | 0 | |a QD281.O9 |b A58 2011 |
100 | 0 | # | |a ANUAR BIN HAMZAH |e author |
245 | 1 | 4 | |a THE STUDY OF OXIDATION LEVEL OF POROUS SILICON USING AUGER'S SPECTROSCOPY |c ANUAR BIN HAMZAH |
264 | # | 0 | |a SHAH ALAM, SELANGOR |b UNIVERSITI TEKNOLOGI MARA. FACULTY OF APPLIED SCIENCES |c 2011 |
300 | # | # | |a xii, 45 pages |b illustrations (some color) |c 30 cm |
336 | # | # | |a text |2 rdacontent |
337 | # | # | |a unmediated |2 rdamedia |
338 | # | # | |a volume |2 rdacarrier |
500 | # | # | |a UiTM X Digitization |
502 | # | # | |a Student report (BSc.)-UNIVERSITI TEKNOLOGI MARA. FACULTY OF APPLIED SCIENCES, 2011 |
504 | # | # | |a Includes bibliographical references (page 41-42) |
520 | # | # | |a Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. |
650 | # | 0 | |a Oxidation |
710 | 2 | # | |a Faculty Of Applied Sciences |e issuing body |
710 | 2 | # | |a Fakulti Sains Gunaan |e issuing body |
856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=941225 |
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