THE STUDY OF OXIDATION LEVEL OF POROUS SILICON USING AUGER'S SPECTROSCOPY
Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties.
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Modern oxidation methods 
Oxidation and Reduction in Organic Synthesis