ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF UNDOPED AND DOPED AMORPHOUS CARBON THIN FILMS BY BIAS ASSISTED PYROLYSIS-CVD
Amorphous carbon thin films were successfully deposited by the bias assisted thermal-CVD system on insulator glass substrates at various deposition temperatures in the range of 250-550 degree celsius. The deposited amorphous carbon thin films are characterized by using I-V measurement, UV-VIS-NIR sp...
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| Format: | Thesis Book |
| Language: | English |
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| Online Access: | Click Here to View Status and Holdings. |
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Add Tag | Summary: | Amorphous carbon thin films were successfully deposited by the bias assisted thermal-CVD system on insulator glass substrates at various deposition temperatures in the range of 250-550 degree celsius. The deposited amorphous carbon thin films are characterized by using I-V measurement, UV-VIS-NIR spectrophotometer and Atomic Force Microscopy (AFM). |
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| Item Description: | UiTM X Digitization |
| Physical Description: | xii, 75 pages illustrations (some color) 30 cm |
| Bibliography: | Includes bibliographical references (page 71-75) |
Advances in amorphous semiconductors