ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF UNDOPED AND DOPED AMORPHOUS CARBON THIN FILMS BY BIAS ASSISTED PYROLYSIS-CVD
Amorphous carbon thin films were successfully deposited by the bias assisted thermal-CVD system on insulator glass substrates at various deposition temperatures in the range of 250-550 degree celsius. The deposited amorphous carbon thin films are characterized by using I-V measurement, UV-VIS-NIR sp...
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| Language: | English |
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Advances in amorphous semiconductors