ROOM TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF POROUS SILICON NANOSTRUCTURE
Porous Silicon (PS) is prepared by electrochemical etching method using p-type Si wafer. The temperature dependent of photoluminescence were determined at room temperature. The sample characterized using field Emission Scanning Electron Microscope (FESEM) and Photoluminescence Spectrometer (PL) at r...
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
Shah Alam, Selangor
Universiti Teknologi MARA
2010
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| Subjects: | |
| Online Access: | Click Here to View Status and Holdings. |
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Add Tag | Summary: | Porous Silicon (PS) is prepared by electrochemical etching method using p-type Si wafer. The temperature dependent of photoluminescence were determined at room temperature. The sample characterized using field Emission Scanning Electron Microscope (FESEM) and Photoluminescence Spectrometer (PL) at room temperature. |
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| Item Description: | UiTM X Digitization |
| Physical Description: | ix, 41 pages illustrations 30 cm |
| Bibliography: | Include bibliographical references |
Photoluminescence research progress