ROOM TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF POROUS SILICON NANOSTRUCTURE

ROOM TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF POROUS SILICON NANOSTRUCTURE

Porous Silicon (PS) is prepared by electrochemical etching method using p-type Si wafer. The temperature dependent of photoluminescence were determined at room temperature. The sample characterized using field Emission Scanning Electron Microscope (FESEM) and Photoluminescence Spectrometer (PL) at r...

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Bibliographic Details
Main Author: Nurzilah Bokhri (Author)
Format: Thesis Book
Language:English
Published: Shah Alam, Selangor Universiti Teknologi MARA 2010
Subjects:
Photoluminescence
Porous silicon
Nanostructures
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