Study of metal-oxide-semiconductor (MOS) structure characteristics with different annealing temperature

Study of metal-oxide-semiconductor (MOS) structure characteristics with different annealing temperature

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Bibliographic Details
Main Author: Siti Fatimah Saipuddin
Corporate Authors: Research Management Institute (RMI), Institut Pengurusan Penyelidikan
Other Authors: Ainorkhilah Mahmood, Siti Hajar Khalid, Mohd Hamizan Selamat
Format: Thesis
Published: Shah Alam, Selangor Universiti Teknologi MARA. Research Management Institute (RMI) 2012
Subjects:
Metal oxide semiconductors
Silicon
Online Access:Click Here to View Status and Holdings.
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