NMOS C-V characterization of gate dielectric thickness
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| Corporate Authors: | , , , |
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| Format: | Thesis |
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Shah Alam, Selangor
Universiti Teknologi MARA
2011
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| Online Access: | Click Here to View Status and Holdings. |
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| 001 | wils-478139 | ||
| 040 | # | # | |a ITMB |
| 090 | 0 | 0 | |a TK7871.95 |b .A54 2011 |
| 100 | 1 | # | |a Anees Abdul Aziz |
| 245 | 1 | 0 | |a NMOS C-V characterization of gate dielectric thickness |c Anees Abdul Aziz, Ahmad Sabirin Zoolfakar, Azrif Manut, Maizatul Zolkapli |
| 260 | # | # | |a Shah Alam, Selangor |b Universiti Teknologi MARA |c 2011 |
| 300 | # | # | |a ix, 72 p. |b ill. |c 30 cm |e 1 CD-ROM (4 3/4 in.) |
| 502 | # | # | |a Research report-Universiti Teknologi MARA. Research Management Institute, 2011 |
| 650 | # | 0 | |a Metal oxide semiconductor field-effect transistors |
| 650 | # | 0 | |a Electronic circuit design. |
| 700 | 1 | # | |a Ahmad Sabirin Zoolfakar |
| 700 | # | # | |a Azrif Manut |
| 700 | # | # | |a Maizatul Zolkapli |
| 710 | 1 | # | |a Universiti Teknologi MARA. |
| 710 | # | # | |a Research Management Institute |
| 710 | # | # | |a Fakulti Kejuruteraan Elektrikal |
| 710 | # | # | |a Faculty of Electrical Engineering |
| 856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=478139 |
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Field effect devices