NMOS C-V characterization of gate dielectric thickness

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Bibliographic Details
Main Author:	Anees Abdul Aziz
Corporate Authors:	Universiti Teknologi MARA, Research Management Institute, Fakulti Kejuruteraan Elektrikal, Faculty of Electrical Engineering
Other Authors:	Ahmad Sabirin Zoolfakar, Azrif Manut, Maizatul Zolkapli
Format:	Thesis
Published:	Shah Alam, Selangor Universiti Teknologi MARA 2011
Subjects:	Metal oxide semiconductor field-effect transistors Electronic circuit design.
Online Access:	Click Here to View Status and Holdings.
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