Fundamentals of Modern VLSI Devices

• Main Authors: Taur, Yuan 1946- (Author), Ning, Tak H. 1943- (Author)
• Format: Book
• Language: English
• Published: Cambridge, UK Cambridge University Press 2009
• Edition: SECOND EDITION
• Subjects: Bipolar transistors; Integrated circuits > Very large scale integration; Metal oxide semiconductors, Complementary
• Online Access: Click Here to View Status and Holdings.
• Physical Description: xxiii, 656 pages illustrations 26 cm
• Bibliography: Includes bibliographical references and index
• ISBN: 0521832942; 9780521832946

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.