AN INVESTIGATION INTO THE FABRICATION OF MOSFET USING SOLID AND LIQUID DOPANT
A dopant is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the optical properties of the substance. There have two types source of dopant which is solid and liquid dopant. These two types source of dopant have di...
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| 001 | wils-941250 | ||
| 005 | 201943153038 | ||
| 008 | 191018s2011 MY ag# ta000 ##ENG#D | ||
| 040 | # | # | |a UiTM |b eng |c UiTM |e rda |
| 090 | 0 | 0 | |a TK7871 |b .M39 2011 |
| 100 | 0 | # | |a Mayzuraini Rahim |e author |
| 245 | 1 | 3 | |a AN INVESTIGATION INTO THE FABRICATION OF MOSFET USING SOLID AND LIQUID DOPANT |c MAYZURAINI BINTI RAHIM |
| 264 | # | 0 | |a SHAH ALAM, SELANGOR |b UNIVERSITI TEKNOLOGI MARA. FACULTY OF APPLIED SCIENCES |c 2011 |
| 300 | # | # | |a ix, 55 pages: |b illustrations (some color); |c 30 cm |
| 336 | # | # | |a text |2 rdacontent |
| 337 | # | # | |a unmediated |2 rdamedia |
| 338 | # | # | |a volume |2 rdacarrier |
| 500 | # | # | |a UiTM X Digitization |
| 502 | # | # | |a Student report (BSc.)-UNIVERSITI TEKNOLOGI MARA, FACULTY OF APPLIED SCIENCES, 2011 |
| 504 | # | # | |a Includes bibliographical references (page 52-53) |
| 520 | # | # | |a A dopant is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the optical properties of the substance. There have two types source of dopant which is solid and liquid dopant. These two types source of dopant have different characteristics. |
| 650 | # | 0 | |a Metal oxide semiconductor |
| 650 | # | 0 | |a Field-effect transistors |
| 710 | 2 | # | |a Faculty Of Applied Sciences |e issuing body |
| 710 | 2 | # | |a Fakulti Sains Gunaan |e issuing body |
| 856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=941250 |
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Silicon RF power MOSFETS