THE STUDY ON SOURCE-TO-GATE AND DRAIN-TO-GATE DEPENDENCY ON DISTANCE AND IV MEASUREMENT
The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effec...
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Field effect devices
Field-effect transistors
