THE STUDY ON SOURCE-TO-GATE AND DRAIN-TO-GATE DEPENDENCY ON DISTANCE AND IV MEASUREMENT
The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effec...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Subjects: | |
| Online Access: | Click Here to View Status and Holdings. |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Add Tag 
Field effect devices
Defects in Microelectronic Materials and Devices
