THE STUDY ON SOURCE-TO-GATE AND DRAIN-TO-GATE DEPENDENCY ON DISTANCE AND IV MEASUREMENT
The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effec...
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| 001 | wils-941232 | ||
| 005 | 201943113726 | ||
| 008 | 191015s2013 MY #g# t#000 ##ENG#D | ||
| 040 | # | # | |a UiTM |b eng |c UiTM |e rda |
| 090 | 0 | 0 | |a TK7871.95 |b S63 2013 |
| 100 | 0 | # | |a Siti Rafidah Abu Nifah |e author |
| 245 | 1 | 4 | |a THE STUDY ON SOURCE-TO-GATE AND DRAIN-TO-GATE DEPENDENCY ON DISTANCE AND IV MEASUREMENT |c SITI RAFIDAH BINTI ABU NIFAH |
| 264 | # | 0 | |a SHAH ALAM, SELANGOR |b UNIVERSITI TEKNOLOGI MARA, FACULTY OF APPLIED SCIENCES |c 2013 |
| 300 | # | # | |a ix, 57 pages: |b illustrations (some color); |c 30 cm |
| 336 | # | # | |a text |2 rdacontent |
| 337 | # | # | |a unmediated |2 rdamedia |
| 338 | # | # | |a volume |2 rdacarrier |
| 500 | # | # | |a UiTM X Digitization |
| 502 | # | # | |a Student report(BSc.)-UNIVERSITI TEKNOLOGI MARA, FACULTY OF APPLIED SCIENCES, 2013 |
| 504 | # | # | |a Includes bibliographical references (page 54-55) |
| 520 | # | # | |a The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effects of different distance source-to-gate (1.5 mm, 2.0 mm, 2.5 mm, 3.0 mm, and 3.5 mm) on MOSFET were determined. |
| 650 | # | 0 | |a Metal oxide semiconductor field-effect transistors |
| 650 | # | 0 | |a Transistor circuits |
| 650 | # | 0 | |a Field-effect transistors |
| 710 | 2 | # | |a Faculty Of Applied Sciences |e issuing body |
| 710 | 2 | # | |a Fakulti Sains Gunaan |e issuing body |
| 856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=941232 |
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Field effect devices