THE STUDY ON SOURCE-TO-GATE AND DRAIN-TO-GATE DEPENDENCY ON DISTANCE AND IV MEASUREMENT
The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effec...
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| Format: | Thesis Book |
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| Online Access: | Click Here to View Status and Holdings. |
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Add Tag | Summary: | The effects of the distance source-to-gate and drain-to-gate I-V characteristics were studied. The sizes of each transistor for five transistors were constant which are 20 mm x 10 mm but the sizes of gate were vary with different lengths which are 7.0 mm, 6.0 mm, 5.0 mm, 4.0 mm and 3.0 mm. The effects of different distance source-to-gate (1.5 mm, 2.0 mm, 2.5 mm, 3.0 mm, and 3.5 mm) on MOSFET were determined. |
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| Item Description: | UiTM X Digitization |
| Physical Description: | ix, 57 pages: illustrations (some color); 30 cm |
| Bibliography: | Includes bibliographical references (page 54-55) |
Field effect devices