STUDIES ON THE OPTICAL AND ELECTRICAL PROPERTIES OF AlxGa1-xAs/GaAs QUANTUM WELL LASER DIODE
The simulation studies on the optical and electrical properties of AlҳGa1_ҳAs / GaAs quantum well (QW) laser diode (LD) have been done by using RSoft LaserMOD software. There are two parameters involved in these studies which are Aι concentrations have been studied are between 4% to 9% with an inter...
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| Format: | Thesis Book |
| Language: | English |
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Shah Alam, Selangor
Universiti teknologi MARA
2013
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| Online Access: | Click Here to View Status and Holdings. |
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| 041 | 0 | # | |a Eng |
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| 100 | 0 | # | |a Nur Syarini Sahimi |e author |
| 245 | 1 | 0 | |a STUDIES ON THE OPTICAL AND ELECTRICAL PROPERTIES OF AlxGa1-xAs/GaAs QUANTUM WELL LASER DIODE |c NUR SYARINI SAHIMI |
| 264 | # | 1 | |a Shah Alam, Selangor |b Universiti teknologi MARA |c 2013 |
| 336 | # | # | |a text |2 rdacontent |
| 337 | # | # | |a unmediated |2 rdamedia |
| 338 | # | # | |a volume |2 rdacarrier |
| 500 | # | # | |a UiTM X Digitization |
| 502 | # | # | |a Student report (BSc.)- Universiti Teknologi MARA, Faculty of Applied Sciences, 2013 |
| 504 | # | # | |a Include bibliographical references |
| 520 | # | # | |a The simulation studies on the optical and electrical properties of AlҳGa1_ҳAs / GaAs quantum well (QW) laser diode (LD) have been done by using RSoft LaserMOD software. There are two parameters involved in these studies which are Aι concentrations have been studied are between 4% to 9% with an interval of 1% and the range of QW thicknesses are 5 nm to 12 nm. From our simulation results, the increment in both Aι concentrations and QW thickness showed a poor in optical and electrical properties which indicate the degradation of the quality of LD and the lasing performance. |
| 650 | # | 0 | |a Semiconductor lasers |
| 710 | 2 | # | |a Faculty of Applied Sciences |e issuing body |
| 040 | # | # | |a Shah Alam |
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GaAs integrated circuits