FABRICATION P⁺- N JUNCTION USING SPIN ON DOPANT

FABRICATION P⁺- N JUNCTION USING SPIN ON DOPANT

Diffusion and doping were major process by which chemical species or dopant was introducing into a semiconductor such as silicon to form the electronic device. The result shows that the ideal I-V curve formed and sheet resistance increase with the increase of concentration of Boron and longer rotati...

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Bibliographic Details
Main Author: Sharuddin Parkasi (Author)
Format: Thesis Book
Published: Shah Alam, Selangor Universiti Teknologi MARA. Faculty of Applied Science 2010
Subjects:
Semiconductor doping
Online Access:Click Here to View Status and Holdings.
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