FABRICATION P⁺- N JUNCTION USING SPIN ON DOPANT
Diffusion and doping were major process by which chemical species or dopant was introducing into a semiconductor such as silicon to form the electronic device. The result shows that the ideal I-V curve formed and sheet resistance increase with the increase of concentration of Boron and longer rotati...
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| Main Author: | |
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| Format: | Thesis Book |
| Published: |
Shah Alam, Selangor
Universiti Teknologi MARA. Faculty of Applied Science
2010
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| Subjects: | |
| Online Access: | Click Here to View Status and Holdings. |
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Add Tag | Summary: | Diffusion and doping were major process by which chemical species or dopant was introducing into a semiconductor such as silicon to form the electronic device. The result shows that the ideal I-V curve formed and sheet resistance increase with the increase of concentration of Boron and longer rotation times in the spinner. |
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| Item Description: | UiTM X Digitization |
| Physical Description: | xi, 56 pages illustrations 30 cm |
| Bibliography: | Include bibliographical references |
Silicon technologies ion implantation and thermal treatment