RAMAN SPECTROSCOPY STUDY ON NANOSTRUCTURED POROUS SILICON
Porous Silicon (PS) is prepared by electrochemical etching method using p-type Si wafer. For the temperature increases the intensity were decreases and the peak shif to the blue range.
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Format: | Thesis Book |
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Shah Alam, Selangor
Universiti Teknologi MARA. Faculty of Applied Science
2009
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Online Access: | Click Here to View Status and Holdings. |
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005 | 2019319164025 | ||
008 | s2009 MY ag# t#000 ##ENG#D | ||
040 | # | # | |a UiTM |e rda |
041 | 0 | # | |a Eng |
090 | 0 | 0 | |a QC463.P5 |b D39 2009 |
100 | 0 | # | |a Dayana Hamizah Abdul Latif |e author |
245 | 1 | 0 | |a RAMAN SPECTROSCOPY STUDY ON NANOSTRUCTURED POROUS SILICON |c DAYANA HAMIZAH BINTI ABDUL LATIFF |
264 | # | 1 | |a Shah Alam, Selangor |b Universiti Teknologi MARA. Faculty of Applied Science |c 2009 |
300 | # | # | |a x, 45 pages |b illustrations |c 30 cm |
336 | # | # | |a text |2 rdacontent |
337 | # | # | |a unmediated |2 rdamedia |
338 | # | # | |a volume |2 rdacarrier |
500 | # | # | |a UiTM X Digitization |
502 | # | # | |a Student report (BSc.)-Universiti Teknologi MARA. Faculty of Applied Science, 2009 |
504 | # | # | |a Include bibliographical references |
520 | # | # | |a Porous Silicon (PS) is prepared by electrochemical etching method using p-type Si wafer. For the temperature increases the intensity were decreases and the peak shif to the blue range. |
650 | # | 0 | |a Polymers |x Spectra |
650 | # | 0 | |a Raman spectroscopy |
710 | 2 | # | |a Faculty of Applied Science |
710 | 2 | # | |a Fakulti Sains Gunaan |e issuing body |
856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=940487 |
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