EFFECTS OF ANNEALING TEMPERATURE AND TIME ON THE SILICON WAFER WITH LIQUID & SOLID DOPANTS

EFFECTS OF ANNEALING TEMPERATURE AND TIME ON THE SILICON WAFER WITH LIQUID & SOLID DOPANTS

The project is a study the behaviour of N and P-type dopant on silicon wafer by using both liquid and solid dopant sources. For P-type silicon wafer, we doped with Phosphorous while for N-type silicon wafer, we doped with Boron.

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Bibliographic Details
Main Author: Riziana Saari (Author)
Format: Thesis Book
Subjects:
Annealing of metals
Deformations (Mechanics)
Strength of materials
Online Access:Click Here to View Status and Holdings.
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245 1 0 |a EFFECTS OF ANNEALING TEMPERATURE AND TIME ON THE SILICON WAFER WITH LIQUID & SOLID DOPANTS  |c RIZIANA BINTI SAARI 
264 # 0 |a Shah Alam, Selangor  |b Universiti teknologi MARA, Faculty of Applied Sciences  |c 2011 
300 # # |a xvi, 100 pages:  |b illustrations (some color);  |c 30 cm 
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502 # # |a Student report(BSc.)-Universiti Teknologi MARA, Faculty of Applied Sciences, 2011 
504 # # |a Includes bibliographical references (page 97-98) 
520 # # |a The project is a study the behaviour of N and P-type dopant on silicon wafer by using both liquid and solid dopant sources. For P-type silicon wafer, we doped with Phosphorous while for N-type silicon wafer, we doped with Boron. 
650 # 0 |a Annealing of metals 
650 # 0 |a Deformations (Mechanics) 
650 # 0 |a Strength of materials 
710 2 # |a Faculty Of Applied Sciences  |e issuing body 
710 2 # |a Fakulti Sains Gunaan  |e issuing body 
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