EFFECTS OF ANNEALING TEMPERATURE AND TIME ON THE SILICON WAFER WITH LIQUID & SOLID DOPANTS

EFFECTS OF ANNEALING TEMPERATURE AND TIME ON THE SILICON WAFER WITH LIQUID & SOLID DOPANTS

The project is a study the behaviour of N and P-type dopant on silicon wafer by using both liquid and solid dopant sources. For P-type silicon wafer, we doped with Phosphorous while for N-type silicon wafer, we doped with Boron.

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Bibliographic Details
Main Author: Riziana Saari (Author)
Format: Thesis Book
Subjects:
Annealing of metals
Deformations (Mechanics)
Strength of materials
Online Access:Click Here to View Status and Holdings.
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Description
Summary:The project is a study the behaviour of N and P-type dopant on silicon wafer by using both liquid and solid dopant sources. For P-type silicon wafer, we doped with Phosphorous while for N-type silicon wafer, we doped with Boron.
Item Description:UiTM X Digitization
Physical Description:xvi, 100 pages: illustrations (some color); 30 cm
Bibliography:Includes bibliographical references (page 97-98)

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