INVESTIGATION ON THE COATING OF LOW REFRACTIVE INDEX QUARTER WAVELENGTH THICK SILICA AS A MATERIAL LAYER FOR DIELECTRIC MIRROR

Sol gel technique was used to form silica solution by using TEOS as precursor. The silica thin were fabricated by dip coating technique onto silicon wafer and glass substrate. The dip coating rate was investigated to achieve the exact thickness of thin film.

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Bibliographic Details
Main Author: SURIANI SAMSURI (Author)
Format: Thesis Book
Language:English
Subjects:
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245 1 0 |a INVESTIGATION ON THE COATING OF LOW REFRACTIVE INDEX QUARTER WAVELENGTH THICK SILICA AS A MATERIAL LAYER FOR DIELECTRIC MIRROR  |c SURIANI BTE SAMSURI 
264 # 0 |a SHAH ALAM, SELANGOR  |b UNIVERSITI TEKNOLOGI MARA. FACULTY OF APPLIED SCIENCES  |c 2011 
300 # # |a vii, 59 pages  |b illustrations (some color)  |c 30 cm 
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502 # # |a Student report (BSc.)-UNIVERSITI TEKNOLOGI MARA. FACULTY OF APPLIED SCIENCES, 2011 
504 # # |a Includes bibliographical references (page 57) 
520 # # |a Sol gel technique was used to form silica solution by using TEOS as precursor. The silica thin were fabricated by dip coating technique onto silicon wafer and glass substrate. The dip coating rate was investigated to achieve the exact thickness of thin film. 
650 # 0 |a Silica 
710 2 # |a Faculty Of Applied Sciences  |e issuing body 
710 2 # |a Fakulti Sains Gunaan  |e issuing body 
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