THE ELECTRICAL CHARACTERISTICS OF P-N JUNCTION FABRICATED ON N-TYPE SILICON WAFER BY USING SOLID DOPANT
Saved in:
Main Author: | SITI HAJARTUL NADIAH BADEK RUZAMAN (Author) |
---|---|
Format: | Thesis |
Published: |
SHAH ALAM, SELANGOR
Universiti Teknologi MARA. Faculty on Applied Sciences
2010
|
Online Access: | Click Here to View Status and Holdings. |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
THE ELECTRICAL CHARACTERISTICS OF P-N JUNCTION FABRICATED ON P-TYPE SILICON WAFER BY USING SOLID DOPANT
by: MOHAMMAD SOLLEHUDDIN ABDULLAH
Published: (2010) -
FABRICATION OF P-N-P JUNCTION BY USING DIFFERENT CONCENTRATION OF LIQUID DOPANT ON SILICON (100) WAFER
by: NUR INTAN SYAHIRAH MAHAZER
Published: (2010) -
FABRICATION P⁺- N JUNCTION USING SPIN ON DOPANT
by: Sharuddin Parkasi
Published: (2010) -
THE EFFECT OF TEMPERATURE IN FABRICATING THE P-N-P JUNCTION TRANSISTOR BY USING LIQUID DOPANT ON SILICON (100) WAFER
by: ELIYA NAMADDIN
Published: (2011) -
COMPARATIVE STUDY FOR THREE DIFFERENT STRUCTURES OF THE P-N JUNCTION ON SILICON (111) WAFER
by: AMIRUL AIMAN AHMAD HISHAM
Published: (2011)