Nanoscale MOS transistors semi-classical transport and applications

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods descr...

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Bibliographic Details
Main Authors: Esseni, David (Author), Palestri, Pierpaolo (Author), Selmi, Luca (Author)
Format: Book
Published: Cambridge Cambridge University Press 2011
©2011
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Online Access:Click Here to View Status and Holdings.
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LEADER 00000nt a2200000 a 4501
001 wils-439791
005 2018729840
008 180802t20112011ENK ag# ##001 |#ENG#D
020 # # |a 0521516846  |q hardback 
020 # # |a 9780521516846  |q hardback 
040 # # |a UiTM  |e rda 
090 0 0 |a TK7871.99.M44  |b E87 2011 
100 1 # |a Esseni, David.  |e author 
245 1 0 |a Nanoscale MOS transistors  |b semi-classical transport and applications  |c David Esseni, Pierpaolo Palestri and Luca Selmi 
264 # 1 |a Cambridge  |b Cambridge University Press  |c 2011 
264 # 1 |c ©2011 
300 # # |a xvii, 470 pages  |b illustrations  |c 26 cm 
336 # # |a text  |2 rdacontent 
337 # # |a unmediated  |2 rdamedia 
338 # # |a volume  |2 rdacarrier 
500 # # |a Includes index. 
520 # # |a Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results. 
650 # 0 |a Electron transport 
650 # 0 |a Metal oxide semiconductors  |x Design and construction 
650 # 0 |a Nanoelectronics 
700 1 # |a Palestri, Pierpaolo  |e author 
700 1 # |a Selmi, Luca  |e author 
856 4 0 |z Click Here to View Status and Holdings.  |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=439791 
964 # # |c BOK  |d EE