Nanoscale MOS transistors semi-classical transport and applications
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods descr...
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Main Authors: | , , |
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Format: | Book |
Published: |
Cambridge
Cambridge University Press
2011
©2011 |
Subjects: | |
Online Access: | Click Here to View Status and Holdings. |
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Summary: | Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results. |
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Item Description: | Includes index. |
Physical Description: | xvii, 470 pages illustrations 26 cm |
ISBN: | 0521516846 9780521516846 |