Defects in Microelectronic Materials and Devices

• Other Authors: Fleetwood, Daniel M. (Editor), Pantelides, Sokrates T. (Editor), Schrimpf, Ronald Donald (Editor)
• Format: Book
• Language: English
• Published: Boca Raton CRC Press 2009
• Subjects: Microelectronics > Testing > Materials; Metal oxide semiconductor field-effect transistors > Testing; Integrated circuits > Defects > Testing
• Online Access: Click Here to View Status and Holdings.
• Physical Description: xvi, 753 pages illustrations 26 cm
• Bibliography: Includes bibliographical references and index
• ISBN: 9781420043761; 1420043765

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them. A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface