Mosfet modeling for VLSI simulation theory and practice
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most...
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New Jersey
World Scientific
2007
©2007 |
| Series: | International Series on Advances in Solid State Electronics and Technology
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| Subjects: | |
| Online Access: | Click Here to View Status and Holdings. |
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| LEADER | 00000nt a2200000 a 4501 | ||
|---|---|---|---|
| 001 | wils-388435 | ||
| 005 | 201872112512 | ||
| 008 | 180802t20072007NJU ag# ##001 |#eng#D | ||
| 020 | # | # | |a 9789812568625 |q hardback |
| 020 | # | # | |a 981256862X |q hardback |
| 040 | # | # | |a UiTM |e rda |
| 090 | 0 | 0 | |a TK7871.95 |b .A763 2007 |
| 100 | 1 | # | |a Arora, Narain |d 1943- |e author |
| 245 | 1 | 0 | |a Mosfet modeling for VLSI simulation |b theory and practice |c Narain Arora |
| 264 | # | 1 | |a New Jersey |b World Scientific |c 2007 |
| 264 | # | 1 | |c ©2007 |
| 300 | # | # | |a xxiii, 605 pages |b illustrations |c 24 cm |
| 336 | # | # | |a text |2 rdacontent |
| 337 | # | # | |a unmediated |2 rdamedia |
| 338 | # | # | |a volume |2 rdacarrier |
| 490 | 1 | # | |a International Series on Advances in Solid State Electronics and Technology |
| 504 | # | # | |a Includes bibliographical references and index |
| 520 | # | # | |a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. |
| 650 | # | 0 | |a Technology and engineering |x Electronics |x Transistors |
| 856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=388435 |
| 964 | # | # | |c BOK |d 01 |
| 998 | # | # | |a 00130##a006.2.2||00250##a002.5.2||00250##b002.5.3||00255##a007.25.3||00260##a002.8.2||00260##b002.8.4||00260##c002.7.6||00264#1a002.8.2||00264#1b002.8.4||01264#1a002.8.2||01264#1b002.8.4||00300##a003.4.1||00300##b003.6.1||00300##c003.5.1||00500##a002.17.2||00502##a007.9.2||00520##a007.2||00520##b007.2||00538##a003.16.9||00546##a006.11||00730##a006.2.2||00730##d006.4||00730##f006.10||00730##n006.2.2||00730##p006.2.2|| |
MOSFET models for VLSI circuit simulation theory and practice