Mosfet modeling for VLSI simulation theory and practice
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most...
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Main Author: | |
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Format: | Book |
Language: | English |
Published: |
New Jersey
World Scientific
2007
©2007 |
Series: | International Series on Advances in Solid State Electronics and Technology
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Subjects: | |
Online Access: | Click Here to View Status and Holdings. |
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Summary: | A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. |
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Physical Description: | xxiii, 605 pages illustrations 24 cm |
Bibliography: | Includes bibliographical references and index |
ISBN: | 9789812568625 981256862X |