Strained-SI heterostructure field effect devices

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Bibliographic Details
Main Author:	Maiti, C. K.
Other Authors:	Chattopadhyay, Swapan 1952-, Bera, L. K
Format:	Book
Published:	New York Taylor & Francis 2007
Series:	Series in materials science and engineering
Subjects:	Metal oxide semiconductor field-effect transistors > Electric properties Silicon > Electric properties
Online Access:	Click Here to View Status and Holdings.
Tags:	Add Tag No Tags, Be the first to tag this record!

MARC


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020	0	0	\|a 0750309938 (alk. paper)
040	#	#	\|a DLC \|d ITMB
090	0	0	\|a TK7871.95 \|b .M27 2007
100	1	0	\|a Maiti, C. K.
245	1	0	\|a Strained-SI heterostructure field effect devices \|c C. K. Maiti, S Chattopadhyay, L. K. Bera
260	0	0	\|a New York \|b Taylor & Francis \|c 2007
300	0	0	\|a 423 p. \|b ill. \|c 25 cm
490	0	0	\|a Series in materials science and engineering
504	0	0	\|a Includes bibliographical references and index
650	#	0	\|a Metal oxide semiconductor field-effect transistors \|x Electric properties
650	#	0	\|a Silicon \|x Electric properties
700	1	1	\|a Chattopadhyay, Swapan \|d 1952-
700	1	1	\|a Bera, L. K
856	4	0	\|z Click Here to View Status and Holdings. \|u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=363463
964	#	#	\|c BOK \|d 01