Nanoscale transistors device physics, modeling and simulation
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Format: | Book |
Published: |
New York
Springer
2006
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Online Access: | Click Here to View Status and Holdings. |
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LEADER | 00000n a2200000 a 4501 | ||
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001 | wils-363114 | ||
020 | # | # | |a 9780387280028 (hbk.) |
020 | # | # | |a 0387280022 (hbk.) |
020 | # | # | |a 9780387280035 (e-ISBN) |
020 | # | # | |a 0387280033 (e-ISBN) |
040 | # | # | |a UKM |d ITMB |
090 | 0 | 0 | |a T174.7 |b .L86 2006 |
100 | 1 | # | |a Lundstrom, Mark |
245 | 1 | 1 | |a Nanoscale transistors |b device physics, modeling and simulation |c Mark S. Lundstrom, Jing Guo |
260 | # | # | |a New York |b Springer |c 2006 |
300 | # | # | |a vi, 217 p. |b ill. |c 24 cm |
504 | # | # | |a Includes bibliographical references and index |
650 | # | 0 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models |
650 | # | 0 | |a Nanotechnology |
650 | # | 0 | |a Nanostructured materials |x Mathematical models |
700 | 1 | # | |a Guo, Jing |d 1977- |
856 | 4 | 0 | |z Click Here to View Status and Holdings. |u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=363114 |
964 | # | # | |c BOK |d 01 |
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