Nanoscale transistors device physics, modeling and simulation

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Bibliographic Details
Main Author:	Lundstrom, Mark
Other Authors:	Guo, Jing 1977-
Format:	Unknown
Published:	New York Springer 2006
Subjects:	Metal oxide semiconductor field-effect transistors > Mathematical models Nanotechnology Nanostructured materials > Mathematical models
Online Access:	Click Here to View Status and Holdings.
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MARC


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020	#	#	\|a 9780387280028 (hbk.)
020	#	#	\|a 0387280022 (hbk.)
020	#	#	\|a 9780387280035 (e-ISBN)
020	#	#	\|a 0387280033 (e-ISBN)
040	#	#	\|a UKM \|d ITMB
090	0	0	\|a T174.7 \|b .L86 2006
100	1	#	\|a Lundstrom, Mark
245	1	1	\|a Nanoscale transistors \|b device physics, modeling and simulation \|c Mark S. Lundstrom, Jing Guo
260	#	#	\|a New York \|b Springer \|c 2006
300	#	#	\|a vi, 217 p. \|b ill. \|c 24 cm
504	#	#	\|a Includes bibliographical references and index
650	#	0	\|a Metal oxide semiconductor field-effect transistors \|x Mathematical models
650	#	0	\|a Nanotechnology
650	#	0	\|a Nanostructured materials \|x Mathematical models
700	1	#	\|a Guo, Jing \|d 1977-
856	4	0	\|z Click Here to View Status and Holdings. \|u https://opac.uitm.edu.my/opac/detailsPage/detailsHome.jsp?tid=363114
964	#	#	\|c BOK \|d 01
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