Nanoscale transistors device physics, modeling and simulation

Nanoscale transistors device physics, modeling and simulation

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Bibliographic Details
Main Author: Lundstrom, Mark
Other Authors: Guo, Jing 1977-
Format: Book
Published: New York Springer 2006
Subjects:
Metal oxide semiconductor field-effect transistors > Mathematical models
Nanotechnology
Nanostructured materials > Mathematical models
Online Access:Click Here to View Status and Holdings.
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Description
Physical Description:vi, 217 p. ill. 24 cm
Bibliography:Includes bibliographical references and index
ISBN:9780387280028 (hbk.)
0387280022 (hbk.)
9780387280035 (e-ISBN)
0387280033 (e-ISBN)

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