SOLID STATE ELECTRONIC DEVICES

• Main Author: Streetman, Ben G. (Author)
• Other Authors: Banerjee, Sanjay
• Format: Book
• Language: English
• Published: Upper Saddle River, N.J. Pearson Prentice Hall 2006; ©2006
• Edition: 6th ed
• Series: Prentice-Hall series in solid state physical electronics
• Subjects: Solid state electronics; Semiconductors
• Online Access: Click Here to View Status and Holdings.

 This classic introductory textbook in its sixth edition retains the two basic goals: (1) develop the basic semiconductor physics concepts to understand current and future devices and (2) provides a sound understanding of current semiconductor devices and technology so that their applications to electronic and optoelectronic circuits and systems can be appreciated. The book is useful for advanced undergraduate and postgraduate students of electrical and electronics engineering and should also prove useful for practicing engineers and scientists, interested in updating their understanding of modern electronics. Table of Contents Preface. About the Authors. Crystal Properties and Growth of Semiconductors. Atoms and Electrons. Energy Bands and Charge Carriers in Semiconductors. Excess Carriers in Semiconductors. Junctions. Field-Effect Transistors. Bipolar Junction Transistors. Optoelectronic Devices. Integrated Circuits. High-Frequency and High-Power Devices. Appendices?I. Definitions of Commonly Used Symbols. II. Physical Constants and Conversion Factors. III. Properties of Semiconductor Materials. IV. Derivation of the Density of States in the Conduction Band. V. Derivation of Fermi?Dirac Statistics. VI. Dry and Wet Thermal Oxide Thickness Grown on Si (100) as a Function of Time and Temperature. VII. Solid Solubilities of Impurities in Si. VIII. Diffusivities of Dopants in Si and SiO2. IX. Projected Range and Straggle as Function of Implant Energy in Si. Answers to Selected Self Quiz Questions.