Silicon germanium technology, modeling, and design
This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development.
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| Main Authors: | , , |
|---|---|
| Format: | Manuscript |
| Language: | English |
| Published: |
Piscataway, NJ Hoboken, NJ
IEEE Press Wiley-Interscience
2004.
©2004. |
| Subjects: | |
| Online Access: | Click Here to View Status and Holdings. |
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| 520 | # | # | |a This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development. |
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Silicon-germanium heterojunction bipolar transistors